Tunnel surface recombination in p—n junctions
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Дата
2001
Науковий керівник
Укладач
Редактор
Назва журналу
ISSN
E-ISSN
Назва тому
Видавець
Одеський національний університет імені І. І. Мечникова
Анотація
Current—voltage curves were measured on AlGaAs-GaAs laser double heterostructures
at temperatures of 77...300 K. The exponential sections of I—V curves correspond
to the ideality factor nt < 2 at room temperature, which increases with lowering
temperature. The I—V curves of surface recombination current were calculated under
assumptions that: a) majority carriers tunneled to the surface and were captured to
surface states; b) minority carriers were captured by surface states «classically»; c) the
change in quasi Fermi level for minority carriers in surface depletion channel linearly
depended on the surface barrier height. The obtained expression for I—V curves explains
the features of measured current-voltage characteristics of laser heterostructures.
Опис
Ключові слова
diode, electron, theoretically, Fermi
Бібліографічний опис
Фотоэлектроника = Photoelectronics