Particularities of Current Transfer in The Crystals Wiht two Types of Recombination Centres
Вантажиться...
Дата
2005
Науковий керівник
Укладач
Редактор
Назва журналу
ISSN
E-ISSN
Назва тому
Видавець
Одеський національний університет імені І. І. Мечникова
Анотація
The lower limit for concentrations of recombination centers was calculated by change
current transfer mechanism on lux-amper characteristics at higher and lower intensity of
light. Analytical expression is obtained for dependency of quenching factor (Q) on intensities
intrinsic and quenching light. It was stated that intensity of the applied field limited
the repeated capture of holes on the centers of slow recombination. On the grounds of
studies in temperature changes of Q(T) value (outside the area of temperature quenching)
is stated that liberation of the holes occurs in two stages with absorption of phonon, but
then — of photon.
Опис
Ключові слова
photon, lux-amper, calculated, temperature
Бібліографічний опис
Фотоэлектроника = Photoelectronics