Substrate Crystallographic Orientation Effect on Photoluminescent Properties of Porous Silicon

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dc.contributor.authorGevelyuk, Serhii A.
dc.contributor.authorDoicho, Ihor K.
dc.contributor.authorMak, Vasyl T.
dc.contributor.authorSoloshenko, Viktor I.
dc.contributor.authorLelechenko, V. P.
dc.contributor.authorZherditska, Y. R.
dc.date.accessioned2018-06-07T13:09:59Z
dc.date.available2018-06-07T13:09:59Z
dc.date.issued2005
dc.description.abstractEtching duration and anodic current density dependences of intensity and maximum position of the photoluminescence spectra of porous silicon layers obtained by anodization of silicon wafer are investigated. The sizes of silicon nanoclusters formed during the anodization procedure are estimated. It is shown that the dependence of formed clusters sizes on etching conditions for porous layers is different for various crystallographic orientations of the substrate. The model explaining this feature at various speeds of porous layer frontal advance deep into silicon substrate is offered. Presented results may be used for optimization of etching conditions in order to obtain the porous silicon layers having the preset parameters.uk
dc.identifierUDC 621.315.592
dc.identifier.citationФотоэлектроника = Photoelectronicsuk
dc.identifier.urihttps://dspace.onu.edu.ua/handle/123456789/16697
dc.language.isoenuk
dc.publisherОдеський національний університет імені І. І. Мечниковаuk
dc.relation.ispartofseries;Вип. 14.
dc.subjectdurationuk
dc.subjectanodizationuk
dc.subjectphotoluminescenceuk
dc.subjectnanoclustersuk
dc.titleSubstrate Crystallographic Orientation Effect on Photoluminescent Properties of Porous Siliconuk
dc.typeArticleuk
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Photoelectronics