Substrate Crystallographic Orientation Effect on Photoluminescent Properties of Porous Silicon
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Дата
2005
Науковий керівник
Укладач
Редактор
Назва журналу
ISSN
E-ISSN
Назва тому
Видавець
Одеський національний університет імені І. І. Мечникова
Анотація
Etching duration and anodic current density dependences of intensity and maximum
position of the photoluminescence spectra of porous silicon layers obtained by anodization
of silicon wafer are investigated. The sizes of silicon nanoclusters formed during the anodization
procedure are estimated. It is shown that the dependence of formed clusters sizes
on etching conditions for porous layers is different for various crystallographic orientations
of the substrate. The model explaining this feature at various speeds of porous layer frontal
advance deep into silicon substrate is offered. Presented results may be used for optimization
of etching conditions in order to obtain the porous silicon layers having the preset
parameters.
Опис
Ключові слова
duration, anodization, photoluminescence, nanoclusters
Бібліографічний опис
Фотоэлектроника = Photoelectronics