Investigation in Temperature and Freouency Dependences for Conductivity in Barrier Region Of nonideal Heterojunction

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dc.contributor.authorSmyntyna, Valentyn A.
dc.contributor.authorBorshchak, Vitalii A.
dc.contributor.authorKutalova, Mariia I.
dc.contributor.authorZatovska, Nataliia P.
dc.contributor.authorBalaban, Andrii P.
dc.contributor.authorБорщак, Виталий Анатольевич
dc.contributor.authorБорщак, Віталій Анатолійович
dc.contributor.authorКуталова, Марія Іванівна
dc.contributor.authorКуталова, Мария Ивановна
dc.date.accessioned2018-06-07T12:19:21Z
dc.date.available2018-06-07T12:19:21Z
dc.date.issued2005
dc.description.abstractThe described experimental data indicate the tunnel-jumping character of carriers transport through space-charge region (SCR) of heterojunction CdS—Cu2S. The conductivity caused by this mechanism essentially depends on the barrier parameters which can vary under illumination. This conductivity has the determinative influence on photo-electric properties of CdS—~Cu2S heterophotoelements. Rather low efficiency values of these elements, small Uoc values and, in many cases, the rectification factor of volt-current characteristics (VCC) are caused by junction external shunting as in the case the element conductivity would not find out the listed above features. In spite of similar VCC, the elements with various shunting mechanisms their character (tunnel-jumping transport on the located levels through a barrier or external with respect to junction transport) can be easy determined experimentally.uk
dc.identifierUDC 621.383
dc.identifier.citationФотоэлектроника = Photoelectronicsuk
dc.identifier.urihttps://dspace.onu.edu.ua/handle/123456789/16686
dc.language.isoenuk
dc.publisherОдеський національний університет імені І. І. Мечниковаuk
dc.relation.ispartofseries;Вип. 14.
dc.subjectShockly—Anderson modeluk
dc.subjectfrequencyuk
dc.subjecttunnel-jumpinguk
dc.subjectessentiallyuk
dc.titleInvestigation in Temperature and Freouency Dependences for Conductivity in Barrier Region Of nonideal Heterojunctionuk
dc.typeArticleuk
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Photoelectronics