Investigation in Temperature and Freouency Dependences for Conductivity in Barrier Region Of nonideal Heterojunction

Вантажиться...
Ескіз
Дата
2005
Науковий керівник
Укладач
Редактор
Назва журналу
Номер ISSN
Номер E-ISSN
Назва тому
Видавець
Одеський національний університет імені І. І. Мечникова
Анотація
The described experimental data indicate the tunnel-jumping character of carriers transport through space-charge region (SCR) of heterojunction CdS—Cu2S. The conductivity caused by this mechanism essentially depends on the barrier parameters which can vary under illumination. This conductivity has the determinative influence on photo-electric properties of CdS—~Cu2S heterophotoelements. Rather low efficiency values of these elements, small Uoc values and, in many cases, the rectification factor of volt-current characteristics (VCC) are caused by junction external shunting as in the case the element conductivity would not find out the listed above features. In spite of similar VCC, the elements with various shunting mechanisms their character (tunnel-jumping transport on the located levels through a barrier or external with respect to junction transport) can be easy determined experimentally.
Опис
Ключові слова
Shockly—Anderson model, frequency, tunnel-jumping, essentially
Бібліографічний опис
Фотоэлектроника = Photoelectronics
DOI
ORCID:
УДК
Зібрання