PbS-based IR-sensitive photoelectrical detectors and matrixes built-in a silicon substrate with schemes of data processing
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Дата
2005
Науковий керівник
Укладач
Редактор
Назва журналу
ISSN
E-ISSN
Назва тому
Видавець
Одеський національний університет імені І. І. Мечникова
Анотація
PbS-based optical thin-layer detectors have been used as IR-sensors in the 0,6-3 mm
region of spectrum in scientific, industrial and military applications for the last 30 years.
However, nowadays the development of non-cooled multi-element matrix modules with PCcompatible
interface is a very important task for physicists, technologists and electronicians.
In this report we shortly presented all steps of such device had been developed from
a single photosensitive photoresistor to a 256 • 256 element matrix module based on PbS
layer integrated into the silicon chip with PC-compatible schemes of data processing.
Опис
Ключові слова
PC-compatible, well-known, photoelectrical, IR-detector
Бібліографічний опис
Фотоэлектроника = Photoelectronics