PbS-based IR-sensitive photoelectrical detectors and matrixes built-in a silicon substrate with schemes of data processing

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dc.contributor.authorAloshyn, Oleksii M.en
dc.contributor.authorPasternak, Valerii O.en
dc.contributor.authorTyurin, Oleksandr V.en
dc.contributor.authorТюрін, Олександр Валентинович
dc.date.accessioned2018-06-07T12:28:50Z
dc.date.available2018-06-07T12:28:50Z
dc.date.issued2005
dc.description.abstractPbS-based optical thin-layer detectors have been used as IR-sensors in the 0,6-3 mm region of spectrum in scientific, industrial and military applications for the last 30 years. However, nowadays the development of non-cooled multi-element matrix modules with PCcompatible interface is a very important task for physicists, technologists and electronicians. In this report we shortly presented all steps of such device had been developed from a single photosensitive photoresistor to a 256 • 256 element matrix module based on PbS layer integrated into the silicon chip with PC-compatible schemes of data processing.en
dc.identifierUDC 539.216.2:546.817.221
dc.identifier.citationФотоэлектроника = Photoelectronics
dc.identifier.urihttps://dspace.onu.edu.ua/handle/123456789/16688
dc.language.isoen
dc.publisherОдеський національний університет імені І. І. Мечниковаuk
dc.relation.ispartofseries;Вип. 14.
dc.subjectPC-compatibleen
dc.subjectwell-knownen
dc.subjectphotoelectricalen
dc.subjectIR-detectoren
dc.titlePbS-based IR-sensitive photoelectrical detectors and matrixes built-in a silicon substrate with schemes of data processingen
dc.typeArticleuk
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Photoelectronics