Electrical conductivity Of ZnSe : In Crystals, Obtained by free growth
dc.contributor.author | Vaksman, Yurii F. | |
dc.contributor.author | Nitsuk, Yurii A. | |
dc.contributor.author | Pavlov, V. V. | |
dc.contributor.author | Purtov, Yu. N. | |
dc.contributor.author | Nasibov, A. S. | |
dc.contributor.author | Shapkin, P. V. | |
dc.contributor.author | Ваксман, Юрій Федорович | |
dc.contributor.author | Ніцук, Юрій Андрійович | |
dc.date.accessioned | 2018-06-06T07:29:37Z | |
dc.date.available | 2018-06-06T07:29:37Z | |
dc.date.issued | 2004 | |
dc.description.abstract | The electrical conductivity of Z n S e :In crystals doped by indium du rin g growth and crystals subjected to diffusion doping by indium from a melt are investigated. It is shown th a t electrical conductivity of Z n S e :In crystals doped by indium during growth is controlled by donors In J,, In f 1- and com p en sa tin g acceptors — zinc vacancies, cen ters (VZnInZn). In crystals subjected to diffusion by indium from melt, electrical conductivity is controlled by shallow donors The an n ea lin g of Z n S e :In crystal in zinc melt gives the decrease in co ncentra tion of com p en sa tin g acceptors and increase of crystal conductivity. | uk |
dc.identifier | UDC 621.315.592 | |
dc.identifier.citation | Фотоэлектроника = Photoelectronics | uk |
dc.identifier.uri | https://dspace.onu.edu.ua/handle/123456789/16609 | |
dc.language.iso | en | uk |
dc.publisher | Одеський національний університет імені І. І. Мечникова | uk |
dc.relation.ispartofseries | ;Вип. 13. | |
dc.subject | crystals | uk |
dc.subject | diffusion | uk |
dc.subject | zinc | uk |
dc.subject | acceptors | uk |
dc.title | Electrical conductivity Of ZnSe : In Crystals, Obtained by free growth | uk |
dc.type | Article | uk |
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