New general approach in the electron theory of catalytic processes on semiconductors and binary metallic materials

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dc.contributor.authorGlushkov, Oleksandr V.
dc.contributor.authorFedchuk, P. O.
dc.contributor.authorFedchuk, Oleksandr P.
dc.contributor.authorLoboda, Andriy V.
dc.date.accessioned2018-06-06T06:19:29Z
dc.date.available2018-06-06T06:19:29Z
dc.date.issued2004
dc.description.abstractA problem of the catalytic activity definition for binary metallic alloys and heavily doped semiconductor materials is considered within a new quantum mechanical and electrodynamical approach.. There are found the quantitative link between the electron structure parameters of indicated materials and their catalytic activity on example of a simple model reactions of the following type: H = H+ -f- e and 0 ^ = 0 2 + e~. It has been found that the link between the Fermi level position dependence upon the metal alloy components concentration and their catalytic activity is quite tight.uk
dc.identifierUDC 541.27:541.128
dc.identifier.citationФотоэлектроника = Photoelectronicsuk
dc.identifier.urihttps://dspace.onu.edu.ua/handle/123456789/16603
dc.language.isoenuk
dc.publisherОдеський національний університет імені І. І. Мечниковаuk
dc.relation.ispartofseries;Вип. 13.
dc.subjectcatalyticuk
dc.subjectmetallicuk
dc.subjectelectrodynamicaluk
dc.subjectsemiconductoruk
dc.titleNew general approach in the electron theory of catalytic processes on semiconductors and binary metallic materialsuk
dc.typeArticleuk
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Photoelectronics