Effect of Ammonia Vapors on The Surface Morphology and Surface Current in p - n-Junctions ON GaP
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Дата
2005
Науковий керівник
Укладач
Редактор
Назва журналу
ISSN
E-ISSN
Назва тому
Видавець
Одеський національний університет імені І. І. Мечникова
Анотація
I—V characteristics of forward and reverse currents in GaP p—л-junctions were measured
in air, in air with ammonia vapors at several partial pressures of NH3, as well as in
air after ammonia vapors treatment. The influence of adsorbed ammonia molecules on the
forward current is explained by such processes: formation of a surface conducting channel
in GaP, caused by the electric field of ammonia ions, which are located on the external
side of the natural oxide layer; double injection into this channel; destroying of the conducting
channel at high injection levels. Laser ellipsometry showed that the refractivity of
the oxide layer on GaP is not changed by ammonia vapors treatment, while the thickness
of this layer increases. Atomic force microscope investigation demonstrated that the ammonia
vapors modify the morphology of the oxide layer.
Опис
Ключові слова
morphology, ammonia, GaP, molecules
Бібліографічний опис
Фотоэлектроника = Photoelectronics