Binary oxides semiconductor transducers for H2S sensors
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Дата
1997
Науковий керівник
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Анотація
The physical processes of semiconductor and heavy metals oxides
sensors on H2S are investigated and possible physical mechanisms
of gas sensitivity in the atmosphere of air and nitrogen are
considered. Mechanism of adsorbtive-desorbtive sensitivity of
heterostuctures to H 2S is connected with conductivity variation
caused by the hydrogen atoms diffusion to the boundaries.
Опис
Ключові слова
physical processes, oxides sensors, physical mechanisms
Бібліографічний опис
UROSENSORS XI. Warsaw (Poland), September 21-24, 1997