Перегляд за Автор "Mak, Vasyl T."

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  • Ескіз
    Документ
    An Interferometric Method of Inner surface Morphology Investigation in Porous Glass
    (Одеський національний університет імені І. І. Мечникова, 2005) Gevelyuk, Serhii A.; Doicho, Ihor K.; Mak, Vasyl T.; Safronsky, E. D.; Vorobyova, V. A.
    A method of inner surface morphology investigation in porous glass using modified Michelson’s interferometer is presented. The possibility of residual silica gel detection in pores by interferometric measurements is shown. The method also allows to distinguish the role of compressing and stretching forces in the mechanical deformation of porous samples. The proposed method is convenient to study the effect of additional treatments on the removal of residual silica gel out of porous glasses. Interferometric measurements make it possible to minimize the mechanical deformations of a porous layer on a solid substrate by tuning the layers thickness ratio.
  • Ескіз
    Документ
    Influence of y-irradiation on photoluminescence of porous germanium obtained by treatment in electric spark discharge
    (Одеський національний університет імені І. І. Мечникова, 2001) Gevelyuk, Serhii A.; Doicho, Ihor K.; Kovalenko, M. P.; Lishchuk, D. E.; Mak, Vasyl T.; Prokopovich, L. P.; Chistyakov, V. P.
    The porous Ge layers are produced by spark discharge method. The photoluminescence spectra of these layers are compared with ones for porous Ge obtained by stain, chemical and electrochemical etching. There are the data in references that for porous Ge layers obtained by different methods the maximum for photoluminescence spectrum may be localized by two different wavelengths depending on the production procedure. In contrast to it, our spectra consist of both peaks. Using the results of photoluminescence spectra studies, the comparison of aging effects for porous Ge layers produced by different methods was made. The influence of у-quanta action on photoluminescence spectra of porous Ge layers was studied.
  • Ескіз
    Документ
    Photoluminescence and structural properties of nano-size CdS inclusions in porous glasses
    (Астропринт, 2007) Gevelyuk, Serhii A.; Doicho, Ihor K.; Mak, Vasyl T.; Zhukov, Serhii O.; Жуков, Сергій Олександрович; Жуков, Сергей Александрович
    Cadmium sulphide nanometer-formations in porous glass matrix are obtained. Results of electron-microscopic, XRD and EDS investigation of these formations are presented. The photoluminescence spectra of obtained samples are inves- tigated, and features of these spectra are explained.
  • Ескіз
    Документ
    Substrate Crystallographic Orientation Effect on Photoluminescent Properties of Porous Silicon
    (Одеський національний університет імені І. І. Мечникова, 2005) Gevelyuk, Serhii A.; Doicho, Ihor K.; Mak, Vasyl T.; Soloshenko, Viktor I.; Lelechenko, V. P.; Zherditska, Y. R.
    Etching duration and anodic current density dependences of intensity and maximum position of the photoluminescence spectra of porous silicon layers obtained by anodization of silicon wafer are investigated. The sizes of silicon nanoclusters formed during the anodization procedure are estimated. It is shown that the dependence of formed clusters sizes on etching conditions for porous layers is different for various crystallographic orientations of the substrate. The model explaining this feature at various speeds of porous layer frontal advance deep into silicon substrate is offered. Presented results may be used for optimization of etching conditions in order to obtain the porous silicon layers having the preset parameters.