Перегляд за Автор "Iatsunskyi, Igor R."

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    Документ
    DETECTION OF AMMONIA MOLECULES USING OPTICAL REFLECTANCE FROM NANOSTRUCTURED SILICON SURFACE
    (Одесский национальный университет имени И. И. Мечникова, 2013) Iatsunskyi, Igor R.; Smyntyna, Valentyn A.; Pavlenko, Mykola V.; Яцунский, Игорь Ростиславович; Смынтына, Валентин Андреевич; Павленко, Николай Николаевич; Яцунський, Ігор Ростиславович; Сминтина, Валентин Андрійович; Павленко, Микола Миколайович
    The reflectance properties of various porous silicon structures after ammonia adsorption were investigated. It was shown that increasing of ammonia concentration in the measurement chamber leads to an increase of the optical reflectance. The most sensitive structures for ammonia detection are porous silicon having approximately size of pores - 10-15 um.
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    Документ
    EVOLUTION OF STRUCTURAL DEFECTS IN SILICON CAUSED BY HIGH-TEMPERATURE OXIDATION
    (Одесский национальный университете имени И. И. Мечникова, 2012) Iatsunskyi, Igor R.; Яцунский, Игорь Ростиславович; Яцунський, Ігор Ростиславович
    The dislocation self-organization processes in near-surface silicon layers of Si-SiO2 during high temperature oxidization have been investigated. It was observed the complex destruction of these layers caused by relaxation of mechanical stresses. We have proposed the defect formation mechanism of near-surface layers in Si-SiO2 structure. For self-organization processes to be explained, the synergetic method was applied. It was shown that the formation of periodical dislocation structures at the interface is a consequence of the spatial instability of the dislocation distribution in the crystal, their self-organization due to correlation effects between the oxygen diffusing along structural defects and an ensemble of dislocations
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    Документ
    FACTORS INFLUENCING THE YIELD STRESS OF SILICON
    (Астропринт, 2010) Smyntyna, Valentyn A.; Kulinich, O. A.; Iatsunskyi, Igor R.; Marchuk, I. A.; Смынтына, Валентин Андреевич; Кулинич, О. А.; Яцунский, Игорь Ростиславович; Марчук, И. А.
    Factors influencing the yield stress of silicon are investigated with advanced research methods. It is shown that elastic stresses which are concentrated at the structural defects (dislocation, crystalline grain boundary, dendrite and lamella) will influence on the yield stress of silicon. Используя современные методы исследования, определенны факторы, влияющие на величину порога пластичности монокристаллического кремния. Наряду с известными факторами, величина порога пластичности будет зависеть от упругих напряжений, локализованных в области нахождения структурных дефектов.
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    Документ
    One and two-phonon raman scattering from nanostructured silicon
    (Одесский национальный университет имени И. И. Мечникова, 2014) Iatsunskyi, Igor R.; Nowaczyk, G.; Pavlenko, Mykola V.; Fedorenko, V. V.; Smyntyna, Valentyn A.; Яцунский, Игорь Ростиславович; Новачик, Г.; Павленко, Николай Николаевич; Федоренко, В. В.; Смынтына, Валентин Андреевич; Яцунський, Ігор Ростиславович; Новачик, Г.; Павленко, Микола Миколайович; Федоренко, В. В.; Сминтина, Валентин Андрійович
    Raman scattering from highly/low resistive nanostructured silicon films prepared by metal-assisted chemical etching was investigated. Raman spectrum of obtained silicon nanostructures was measured. Interpretation of observed one and two-phonon Raman peaks are presented. First-order Raman peak has a redshift and broadening. This phenomenon is analyzed in the framework of the phonon confinement model taking into account mechanical stress effects. Second-order Raman peaks were found to be shifted and broadened in comparison to those in the bulk silicon. The peak shift and broadening of two-phonon Raman scattering relates to phonon confinement and disorder. A broad Raman peak between 900-1100 cm-1 corresponds to superposition of three transverse optical phonons ~2TO (X), 2TO (W) and 2TO (L). Influence of excitation wavelength on intensity redistribution of two-phonon Raman scattering components (2TO) is demonstrated and preliminary theoretical explanation of this observation is presented.