The analysis of electrical processes in semiconductor cadmium selensde layers, caused by the structural transformations. Possible applications
| dc.contributor.author | Hrinevych, Viktor S. | |
| dc.contributor.author | Smyntyna, Valentyn A. | |
| dc.date.accessioned | 2017-11-30T10:16:40Z | |
| dc.date.available | 2017-11-30T10:16:40Z | |
| dc.date.issued | 1995 | |
| dc.description.abstract | The physical conditions of functioning of sensitive element for the elastic deformations registration In the microvolume of electronic systems are analysed. The sensitive element is a semiconductor pollycrystalllne film containing crystallites of two structure phases of (ot+p)CdSe. The considerable mechanical tensions arise at the Intergrain boundary of the said a and p crystallites. The result of that can be registered electrically In the form of the sharp change of current (equiltbrlous conductivity) In the circuit containing the sensitive element. | uk |
| dc.identifier.citation | Abstracts of the International Semiconductor Conference CAS'95. Octo-ber 11-14, 1995. Sinaia, Romania. | uk |
| dc.identifier.uri | https://dspace.onu.edu.ua/handle/123456789/11625 | |
| dc.language.iso | en | uk |
| dc.subject | physical conditions | uk |
| dc.subject | sensitive element | uk |
| dc.subject | registration | uk |
| dc.title | The analysis of electrical processes in semiconductor cadmium selensde layers, caused by the structural transformations. Possible applications | uk |
| dc.type | Article | uk |
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