Перегляд за Автор "Yevtushenko, Nina H."

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  • Ескіз
    Документ
    Interaction SnO2 thin Film with Organic vapours in neutral Atmosphere
    (Одеський національний університет імені І. І. Мечникова, 2004) Viter, Roman V.; Smyntyna, Valentyn A.; Baranovsky, I.; Yevtushenko, Nina H.; Kurkov, V.; Kravetz, E.
    The influence of oxygen and organic vapors on S n0 2 thin films conductance has been studied in different conditions. Gas sensitivity for different vapors was researched under different temperatures. It was pointed that oxygen and water presence influenced the sensor sensitivity. The mechanism for interaction of Sn02 surface with ethanol mixture was proposed. Oxygen role in such processes was discussed. To determine structural peculiarities XRD experiments were provided.
  • Ескіз
    Документ
    Structural properties of Nanocrystalline Tin dioxide Films Deposited by electrostatic Spray Pyrolisis Method
    (Одеський національний університет імені І. І. Мечникова, 2005) Viter, Roman V.; Smyntyna, Valentyn A.; Yevtushenko, Nina H.
    This paper describes investigation of structural properties of nanocrystalline tin dioxide films deposited by electrostatic spray pyrolisis method. Average crystalline size measured from XRD methods was 3,5±0,8 nm and 5,8±0,9 nm for films deposited on glass and alumina substrates. Sensitivity of tin dioxide thin films to ethanol was measured under different ethanol concentrations. Annealing temperature influence on crystalline size and sensitive properties was studied.
  • Ескіз
    Документ
    Surface modification of gallium phosphide stimulated by high-power pulsed laser irradiation
    (Одеський національний університет імені І. І. Мечникова, 2004) Yevtushenko, Nina H.; Stukalov, Serhii A.; Rotner, S. M.
    The growth condition effect of gallium phosphide monocrystals grown by Czochralski method on change of microhardness, photoluminescence and edge absorption spectrum under the action of high power pulsed laser radiation has been studied. The modifications of microhardness and edge absorption curves, increases in a number of radiative recombination centers has been associated with laser stimulated dissociation of the region rich of impurities, generation of defects and their interaction with intrinsic defects.