Перегляд за Автор "Dragoev, A. A."

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  • Ескіз
    Документ
    Calculation for migration-dependent changes in near-contact space-charge regions of sensitized crystals
    (Астропринт, 2010) Dragoev, A. A.; Muntjanu, A. V.; Karakis, Yurii M.; Kutalova, Mariia I.; Драгоев, А. А.; Мунтяну, А. В.; Каракис, Юрий Николаевич; Куталова, Мария Ивановна; Куталова, Марія Іванівна; Каракіс, Юрій Миколайович
    Energy shape for contact barrier to crystal contained R-centers has been calculated. It was shown that migration of sensitizing centers can cause the longtime changes in shape of photocurrent relaxation curves.
  • Ескіз
    Документ
    Features of photocurrent relaxation in sensor-based CdS crystals or features of photocurrent relaxation in crystals with fast and slow recombination centres
    (Одесский национальный университете имени И. И. Мечникова, 2012) Dragoev, A. A.; Ilyashenko, A. S.; Babinchuk, V. S.; Karakis, Yurii M.; Kutalova, Mariia I.; Драгоев, А. А.; Ильяшенко, А. С.; Каракис, Юрий Николаевич; Куталова, Мария Ивановна; Бабинчук, В. С.; Куталова, Марія Іванівна; Каракіс, Юрій Миколайович
    The fast relaxation of the photocurrent associated with electronic processes has been explored. The external factors effect has been investigated. It was shown that in contrast to the accepted view of the phenomena, the of carriers' transitions mechanism includes thermal excitation in sensitivity centers, and only then transition to the free state.
  • Ескіз
    Документ
    Peculiarities in photoexcitation of carriers from deep traps
    (Астропринт, 2006) Dragoev, A. A.; Karakis, Yurii M.; Kutalova, Mariia I.; Драгоев, А. А.; Каракис, Юрий Николаевич; Куталова, Мария Ивановна; Драгоєв, О. О.; Каракіс, Юрій Миколайович; Куталова, Марія Іванівна
    This work is devoted to the studies in nuances of the processes proceeding at excitation of charge carriers from bound state to current conducting one. The effect for infrared quenching of photocurrent was used as the method to investigate the mechanism of trap injection from R-centers. It was shown that after photoexcitation the hole could recurrently and spontaneously return to the source center. The anomalously low quantum yield for IR-light, and also the change in spectral distribution of quenching coefficient on applied field and light intensity point out this.
  • Ескіз
    Документ
    Studies of processes within short-wave threshold of photocurrent infrared quenching
    (Астропринт, 2007) Dragoev, A. A.; Karakis, Yurii M.; Kutalova, Mariia I.; Драгоев, А. А.; Каракис, Юрий Николаевич; Куталова, Мария Ивановна; Драгоєв, О. О.; Каракіс, Юрій Миколайович; Куталова, Марія Іванівна
    It is shown that spectral position for short-wave threshold of photocurrent infrared quenching can be the indicator for flowing processes of occupation-depletion in recombination traps. It is determined that the competition between photoexcitation and quenching of photocurrent is the characteristic for this spectral region. Thereby, the wavelength of short-wave edge for IR-quenching becomes sensitive to internal exposures. The model explaining the observed changes is developed.