Novikova, M. A.Karakis, Yurii M.Kutalova, Mariia I.Куталова, Марія ІванівнаКуталова, Мария ИвановнаКаракіс, Юрій Миколайович2018-06-072018-06-072005Фотоэлектроника = Photoelectronicshttps://dspace.onu.edu.ua/handle/123456789/16694The lower limit for concentrations of recombination centers was calculated by change current transfer mechanism on lux-amper characteristics at higher and lower intensity of light. Analytical expression is obtained for dependency of quenching factor (Q) on intensities intrinsic and quenching light. It was stated that intensity of the applied field limited the repeated capture of holes on the centers of slow recombination. On the grounds of studies in temperature changes of Q(T) value (outside the area of temperature quenching) is stated that liberation of the holes occurs in two stages with absorption of phonon, but then — of photon.enphotonlux-ampercalculatedtemperatureArticle