Yevtushenko, Nina H.Stukalov, Serhii A.Rotner, S. M.2018-06-062018-06-062004Фотоэлектроника = Photoelectronicshttps://dspace.onu.edu.ua/handle/123456789/16604The growth condition effect of gallium phosphide monocrystals grown by Czochralski method on change of microhardness, photoluminescence and edge absorption spectrum under the action of high power pulsed laser radiation has been studied. The modifications of microhardness and edge absorption curves, increases in a number of radiative recombination centers has been associated with laser stimulated dissociation of the region rich of impurities, generation of defects and their interaction with intrinsic defects.enmonocrystalCzochralski methodlaserspectrumSurface modification of gallium phosphide stimulated by high-power pulsed laser irradiationArticle