Chebanenko, Anatoliy P.Chemeresiuk, Heorhii H.Чебаненко, Анатолій Павлович2018-06-062018-06-062004Фотоэлектроника = Photoelectronicshttps://dspace.onu.edu.ua/handle/123456789/16611Volt-current ch ara cte ristics and tem p e ra tu re dependencies of c u rre n t for zinc selenide e lectro lumin e sc en t films are p resented. The possibility to determine some param ete rs of polycrystalline layer from th e s e m e a su rem en ts — linear sizes of crystallites, th ick n e ss and en ergy height of intercry sta llin e potential b arriers is shown.enzincpolycrystallineluminescentintercrystalliteDetermination of parameters for intercrystallite barriers of Zinc selenide electroluminescent FilmsArticle