Borshchak, Vitalii A.Smyntyna, Valentyn A.Brytavskyi, Yevhen V.Борщак, Виталий АнатольевичБорщак, Віталій Анатолійович2015-02-092015-02-092014Фотоэлектроника = Photoelectronicshttps://dspace.onu.edu.ua/handle/123456789/5771Фотоэлектроника = Photoelectronics / ОНУ имени И. И. Мечникова. - Одесса, 2014. - англThe work is devoted to modeling and calculation of the spatial distribution of the concentration of charge localized in the space charge region (SCR) heterojunction, this distribution changes with time at different initial filling of deep traps centers nonequilibrium holes. Within the framework described model the theoretical calculation of two characteristic stages of relaxation current, compliance with the calculated and experimentally obtained dependencies was demonstrated.ennonideal heterojunctionimage sensordeep trapstunnelingArticle