Borshchak, Vitalii A.Balaban, Andrii P.Zatovska, Nataliia P.Kutalova, Mariia I.Smyntyna, Valentyn A.Борщак, Віталій АнатолійовичБорщак, Виталий АнатольевичКуталова, Мария ИвановнаКуталова, Марія Іванівна2012-07-302012-07-302004Фотоэлектроника = Photoelectronicshttps://dspace.onu.edu.ua/handle/123456789/2560Фотоэлектроника = Photoelectronics / ОНУ имени И. И. Мечникова. - Одесса : Астропринт,2004. - англ.For Schottky barrier structures it can be stated thai the contribution of tunneling of non-equilibrium carriers, trapped near the interface, is significant in photocapacilance re¬laxation. For a depletion region width less than 0,3 |im, the application of theory, based on thermal release of centers, to determine the parameters of those centers gives an error close to the measured value. In case of thin barriers the parameters have to be obtained from the slow phase of photocapacitance relaxation.enArticle