Smyntyna, Valentyn A.Vashpanov Yu. A.Hrinevych, Viktor S.2017-11-282017-11-281997UROSENSORS XI. Warsaw (Poland), September 21-24, 1997https://dspace.onu.edu.ua/handle/123456789/11570The physical processes of semiconductor and heavy metals oxides sensors on H2S are investigated and possible physical mechanisms of gas sensitivity in the atmosphere of air and nitrogen are considered. Mechanism of adsorbtive-desorbtive sensitivity of heterostuctures to H 2S is connected with conductivity variation caused by the hydrogen atoms diffusion to the boundaries.enphysical processesoxides sensorsphysical mechanismsBinary oxides semiconductor transducers for H2S sensorsArticle