Ptashchenko, Oleksandr O.Ptashchenko, Fedir O.Птащенко, Александр АлександровичПтащенко, Олександр Олександрович2018-06-012018-06-012001Фотоэлектроника = Photoelectronicshttps://dspace.onu.edu.ua/handle/123456789/16446Current—voltage curves were measured on AlGaAs-GaAs laser double heterostructures at temperatures of 77...300 K. The exponential sections of I—V curves correspond to the ideality factor nt < 2 at room temperature, which increases with lowering temperature. The I—V curves of surface recombination current were calculated under assumptions that: a) majority carriers tunneled to the surface and were captured to surface states; b) minority carriers were captured by surface states «classically»; c) the change in quasi Fermi level for minority carriers in surface depletion channel linearly depended on the surface barrier height. The obtained expression for I—V curves explains the features of measured current-voltage characteristics of laser heterostructures.endiodeelectrontheoreticallyFermiArticle