Smyntyna, Valentyn A.Borshchak, Vitalii A.Kutalova, Mariia I.Zatovska, Nataliia P.Balaban, Andrii P.Сминтина, Валентин АндрійовичБорщак, Віталій АнатолійовичКуталова, Марія ІванівнаЗатовська, Наталія ПетрівнаБалабан, Андрій Петрович2018-06-072018-06-072005Investigation in temperature and frequency dependences for conductivity in barrier region of nonideal heterojunction / V. A. Smyhntyna, V. A. Borschak, M. I. Kutalova, N. P. Zatovskaya, A. P. Balaban // Photoelectronics. – 2005. – Iss. 14. – P. 5–7.https://dspace.onu.edu.ua/handle/123456789/16686The described experimental data indicate the tunnel-jumping character of carriers transport through space-charge region (SCR) of heterojunction CdS—Cu2S. The conductivity caused by this mechanism essentially depends on the barrier parameters which can vary under illumination. This conductivity has the determinative influence on photo-electric properties of CdS—~Cu2S heterophotoelements. Rather low efficiency values of these elements, small Uoc values and, in many cases, the rectification factor of volt-current characteristics (VCC) are caused by junction external shunting as in the case the element conductivity would not find out the listed above features. In spite of similar VCC, the elements with various shunting mechanisms their character (tunnel-jumping transport on the located levels through a barrier or external with respect to junction transport) can be easy determined experimentally.enShockly—Anderson modelnonideal heterojunctiontunnel-jumpingconductivityArticle621.383