Golovanov, V. V.Smyntyna, Valentyn A.Brinzari, V.Korotcenkov, G.2012-07-302012-07-302001Фотоэлектроника = Photoelectronicshttps://dspace.onu.edu.ua/handle/123456789/2559Фотоэлектроника = Photoelectronics / ОНУ имени И. И. Мечникова. - Одесса : Астропринт,2001. - англ.Electronic structure of chemisorption complexes on surface of oxidic a-S^WO^- and Cd,S-based gas sensors with different elemental composition were comparatively studied by XPS, CEMS and IR-spectroscopy combined with conductivity measurements. The surface sites of Cd and Sn with different coordination were characterized by chemi¬sorption of CO. It was found, differing from the case in well-oxidized Sn02, that elec¬trical conductance of Sn,WOj, and CdxS films appeared to either increase or decrease when exposed to CO depended on concentration of surface Sn and Cd ions, partial pressure of analyzed gas and operating temperature.enArticle