Terletskaya, L. L.Skobeeva, Valentyna M.Golubtsov, V. V.2018-06-012018-06-012001Фотоэлектроника = Photoelectronicshttps://dspace.onu.edu.ua/handle/123456789/16449The photosensors with non-ideal heterojunction, prepared by special technique, have property of anode voltage independent accumulation and memory. The regularity of structure switching was found in dependence on intensity and duration of light signal. The mechanism of memory effects is proposed. The possibility of creating of energy independent memory devices is shown.enphotoheterothyristorsheterojunctionqualitativelyilluminationArticle