Gevelyuk, Serhii A.Doicho, Ihor K.Kovalenko, M. P.Lishchuk, D. E.Mak, Vasyl T.Prokopovich, L. P.Chistyakov, V. P.2018-06-012018-06-012001Фотоэлектроника = Photoelectronicshttps://dspace.onu.edu.ua/handle/123456789/16451The porous Ge layers are produced by spark discharge method. The photoluminescence spectra of these layers are compared with ones for porous Ge obtained by stain, chemical and electrochemical etching. There are the data in references that for porous Ge layers obtained by different methods the maximum for photoluminescence spectrum may be localized by two different wavelengths depending on the production procedure. In contrast to it, our spectra consist of both peaks. Using the results of photoluminescence spectra studies, the comparison of aging effects for porous Ge layers produced by different methods was made. The influence of у-quanta action on photoluminescence spectra of porous Ge layers was studied.enphotoluminescencegermaniumoxidespectrumArticle