Malushin, Nikolay V.Skobeeva, Valentyna M.Smyntyna, Valentyn A.Dali, A. K,2018-06-012018-06-012001Фотоэлектроника = Photoelectronicshttps://dspace.onu.edu.ua/handle/123456789/16452The features of photoconductivity in semi-insulating layers ZnSe^Te,^ have been studied. The dependence of the photocurrent on applied voltage has been investigated. It is observed that the voltage under which the space-charge-limited (SCL) current flows the impurity maximum with Av = 1,4 eV appears in the spectra of photocurrent. The residual photoconductivity is observed under illumination of impurity absorption region. And the ratio of photocurrent to the dark one reaches of value 105. The observed phenomena are explained by space inhomogeneity of the layers.enphotosensitivityphotoelectricequalizedinhomogenityResidual photoconductivity effect in semi-insulator films ZnSexTe1-xArticle