Residual photoconductivity effect in semi-insulator films ZnSexTe1-x
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Файли
Дата
2001
Науковий керівник
Укладач
Редактор
Назва журналу
ISSN
E-ISSN
Назва тому
Видавець
Одеський національний університет імені І. І. Мечникова
Анотація
The features of photoconductivity in semi-insulating layers ZnSe^Te,^ have been
studied. The dependence of the photocurrent on applied voltage has been investigated.
It is observed that the voltage under which the space-charge-limited (SCL) current
flows the impurity maximum with Av = 1,4 eV appears in the spectra of photocurrent.
The residual photoconductivity is observed under illumination of impurity absorption
region. And the ratio of photocurrent to the dark one reaches of value 105. The observed
phenomena are explained by space inhomogeneity of the layers.
Опис
Ключові слова
photosensitivity, photoelectric, equalized, inhomogenity
Бібліографічний опис
Фотоэлектроника = Photoelectronics