Studies of processes within short-wave threshold of photocurrent infrared quenching
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Дата
2007
Науковий керівник
Укладач
Редактор
Назва журналу
ISSN
E-ISSN
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Видавець
Астропринт
Анотація
It is shown that spectral position for short-wave threshold of photocurrent infrared quenching can be the indicator for flowing processes of occupation-depletion in recombination traps. It is determined that the competition between photoexcitation and quenching of photocurrent is the characteristic for this spectral region. Thereby, the wavelength of short-wave edge for IR-quenching becomes sensitive to internal exposures. The model explaining the observed changes is developed.
Опис
Фотоэлектроника = Photoelectronics / ОНУ имени И. И. Мечникова. - Одесса : Астропринт, 2007.
Ключові слова
Бібліографічний опис
Фотоэлектроника = Photoelectronics