Перегляд за Автор "Stupak, Oleksandra E."
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Документ Determination of band gap of semiconductor material in end product(Одесский национальный университет имени И. И. Мечникова, 2014) Bak, A. Yu.; Karakis, Yurii M.; Kutalova, Mariia I.; Chebanenko, Anatoliy P.; Бак, А. Ю.; Каракіс, Юрій Миколайович; Ступак, Олександра Едуардівна; Куталова, Марія Іванівна; Чебаненко, Анатолій Павлович; Stupak, Oleksandra E.; Бак, А. Ю.; Каракис, Юрий Николаевич; Ступак, Александра Эдуардовна; Куталова, Мария Ивановна; Чебаненко, Анатолий ПавловичThe paper puts forward a method for determination of semiconductor activation energy in end product. It is illustrated that band gap can be calculated at cutoffs on both axes of graphs ln(I) ÷U, measured at different temperatures. Minimum temperature interval is determined depending on measuring accuracy. A new method for determination of value Eg without VAC extrapolation is put forward.Документ Photoelectric properties of the structure Cr-ZnSe Schottky barrier(Одесский национальный университет имени И. И. Мечникова, 2014) Chebanenko, Anatoliy P.; Stupak, Oleksandra E.; Чебаненко, Анатолій Павлович; Ступак, Олександра Едуардівна; Чебаненко, Анатолий Павлович; Ступак, Александра ЭдуардовнаExplored the structures based on the ZnSe single crystal with a semitransparent layer of chromi¬um. The current-voltage and capacitance-voltage characteristics of the structures indicate that Cr- ZnSe contact is a lock and close in its properties to the Schottky barrier. The calculated equilibrium barrier height is 1.22 eV. In the structures in the reverse biased direction to the detected occurrence of photosensitivity wavelength region of the spectrum up to 230 nm wavelength. This is due to the deterioration of conditions for the recombination of photoexited carriers in fast recombination centers in a strong electric field in the surface region of the reverse bias pin barrier. Calculated from critical frequency of the photocurrent spectrum contact barrier height value of 1.18 eV goes with the results obtained from the C-V characteristics.