Перегляд за Автор "Pavlenko, Mykola V."

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  • Ескіз
    Документ
    DETECTION OF AMMONIA MOLECULES USING OPTICAL REFLECTANCE FROM NANOSTRUCTURED SILICON SURFACE
    (Одесский национальный университет имени И. И. Мечникова, 2013) Iatsunskyi, Igor R.; Smyntyna, Valentyn A.; Pavlenko, Mykola V.; Яцунский, Игорь Ростиславович; Смынтына, Валентин Андреевич; Павленко, Николай Николаевич; Яцунський, Ігор Ростиславович; Сминтина, Валентин Андрійович; Павленко, Микола Миколайович
    The reflectance properties of various porous silicon structures after ammonia adsorption were investigated. It was shown that increasing of ammonia concentration in the measurement chamber leads to an increase of the optical reflectance. The most sensitive structures for ammonia detection are porous silicon having approximately size of pores - 10-15 um.
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    Документ
    INVESTIGATION OF NANOSTRUCTURED SILICON SURFACES USING FRACTAL ANALYSIS
    (Astroprint, 2011) Smyntyna, Valentyn A.; Kulinich, O. A.; Yatsunskiy, I. R.; Marchuk, I. A.; Pavlenko, Mykola V.; Смынтына, Валентин Андреевич; Кулинич, О. А.; Яцунский, Игорь Ростиславович; Марчук, И. А.; Павленко, Николай Николаевич; Сминтина, Валентин Андрійович; Кулініч, О. А.; Яцунський, Ігор Ростиславович; Марчук, І. О.; Павленко, Микола Миколайович
    Fractal analysis was applied to images of nanostructured silicon surfaces which were acquired with a scanning electron microscope.A fractal model describing nanostructured silicon surfaces morphology is elaborated.It were obtained the numerical results for the fractal dimensions for 2 samples with different nanostructured shapes.
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    Документ
    One and two-phonon raman scattering from nanostructured silicon
    (Одесский национальный университет имени И. И. Мечникова, 2014) Iatsunskyi, Igor R.; Nowaczyk, G.; Pavlenko, Mykola V.; Fedorenko, V. V.; Smyntyna, Valentyn A.; Яцунский, Игорь Ростиславович; Новачик, Г.; Павленко, Николай Николаевич; Федоренко, В. В.; Смынтына, Валентин Андреевич; Яцунський, Ігор Ростиславович; Новачик, Г.; Павленко, Микола Миколайович; Федоренко, В. В.; Сминтина, Валентин Андрійович
    Raman scattering from highly/low resistive nanostructured silicon films prepared by metal-assisted chemical etching was investigated. Raman spectrum of obtained silicon nanostructures was measured. Interpretation of observed one and two-phonon Raman peaks are presented. First-order Raman peak has a redshift and broadening. This phenomenon is analyzed in the framework of the phonon confinement model taking into account mechanical stress effects. Second-order Raman peaks were found to be shifted and broadened in comparison to those in the bulk silicon. The peak shift and broadening of two-phonon Raman scattering relates to phonon confinement and disorder. A broad Raman peak between 900-1100 cm-1 corresponds to superposition of three transverse optical phonons ~2TO (X), 2TO (W) and 2TO (L). Influence of excitation wavelength on intensity redistribution of two-phonon Raman scattering components (2TO) is demonstrated and preliminary theoretical explanation of this observation is presented.
  • Ескіз
    Документ
    Silicon nanopillars forming and covering by Zn and Ti oxides for solar energy applications and biosensorics
    (Одеський національний університет імені І. І. Мечникова, 2017) Brytavskyi, Yevhen V.; Tereshchenko, Alla V.; Myndrul, Valerii B.; Pavlenko, Mykola V.; Smyntyna, Valentyn A.; Бритавський, Євген Вікторович; Терещенко, Алла Володимирівна; Миндрул, Валерій Борисович; Павленко, Микола Миколайович; Сминтина, Валентин Андрійович; Бритавский, Евгений Викторович; Терещенко, Алла Владимировна; Мындрул, Валерий Борисович; Павленко, Николай Николаевич; Смынтына, Валентин Андреевич
    The work is focused on technology and characterization issues of silicon pillar nanostructures in combination with metal oxides, such as ZnO and TiO2, for various applications in field of biosensor and solar energy. The metal-assisted chemical etching method (MACE) modified with latex nanobeads lithography and spin-coating technique, was used to fabricate the uniform silicon nanopillar arrays. Atomic layer deposition technique (ALD) which is utilized for formation of oxide layers displays uniform coverage of the arrays and provides thin film formation independently on surface peculiarities. Therefore, it can be applied both for planar samples and 3D patterned substrates with porous media.