INVESTIGATION IN TEMPERATURE AND FREQUENCY DEPENDENCES FOR CONDUCTIVITY IN BARRIER REGION OF NONIDEAL HETEROJUNCTION

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dc.contributor.authorSmyntyna, Valentyn A.
dc.contributor.authorBorshchak, Vitalii A.
dc.contributor.authorKutalova, Mariia I.
dc.contributor.authorZatovska, Nataliia P.
dc.contributor.authorBalaban, Andrii P.
dc.contributor.authorБорщак, Віталій Анатолійович
dc.contributor.authorБорщак, Виталий Анатольевич
dc.contributor.authorКуталова, Мария Ивановна
dc.contributor.authorКуталова, Марія Іванівна
dc.date.accessioned2012-10-12T12:03:14Z
dc.date.available2012-10-12T12:03:14Z
dc.date.issued2005
dc.descriptionФотоэлектроника = Photoelectronics / ОНУ имени И. И. Мечникова. - Одесса : Астропринт,2005. - англ.uk
dc.description.abstractThe described experimental data indicate the tunnel-jumping character of carriers transport through space-charge region (SCR) of heterojunction CdS—Cu2S.The conductivity caused by this mechanism essentially depends on the barrier parameters which can vary under illumination.This conductivity has the determinative influence on photo-electric properties of CdS—Cu2S heterophotoelements. Rather low efficiency values of these elements, small Uос values and,in many cases,the rectification factor of volt-current char¬acteristics (VCC) are caused by junction external shunting as in the case the element conductivity would not find out the listed above features.In spite of similar VCC,the elements with various shunting mechanisms their character (tunnel-jumping transport on the located levels through a barrier or external with respect to junction transport) can be easy determined experimentally.uk
dc.identifier.citationФотоэлектроника = Photoelectronicsuk
dc.identifier.urihttps://dspace.onu.edu.ua/handle/123456789/2602
dc.language.isoenuk
dc.publisherАстрапринтuk
dc.relation.ispartofseries;№14,р.5-7
dc.titleINVESTIGATION IN TEMPERATURE AND FREQUENCY DEPENDENCES FOR CONDUCTIVITY IN BARRIER REGION OF NONIDEAL HETEROJUNCTIONuk
dc.typeArticleuk
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Photoelectronics