Studies of processes within short-wave threshold of photocurrent infrared quenching
Вантажиться...
Дата
2007
Науковий керівник
Укладач
Редактор
Назва журналу
Номер ISSN
Номер E-ISSN
Назва тому
Видавець
Астропринт
Анотація
It is shown that spectral position for short-wave threshold of photocurrent infrared quenching can be the indicator for flowing processes of occupation-depletion in recombination traps. It is determined that the competition between photoexcitation and quenching of photocurrent is the characteristic for this spectral region. Thereby, the wavelength of short-wave edge for IR-quenching becomes sensitive to internal exposures. The model explaining the observed changes is developed.
Опис
Фотоэлектроника = Photoelectronics / ОНУ имени И. И. Мечникова. - Одесса : Астропринт, 2007.
Ключові слова
Бібліографічний опис
Фотоэлектроника = Photoelectronics