EFFECT OF AMMONIA VAPORS ON THE SURFACE CURRENT IN SILICON P-N JUNCTIONS
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Дата
2007
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Астропринт
Анотація
I V characteristics of forward and reverse currents in silicon p-n junctions were
measured in air, in air with ammonia vapors at several partial pressures of NH3, as well
as in air after ammonia vapors treatment. The influence of adsorbed ammonia molecules
on the forward current is explained by such processes: a) an increase in the surface re-
combination rate, caused by the electric field of ammonia ions, which are localized on the
external side of the natural oxide layer; b) etching out some surface recombination states.
The changes in the forward and reverse currents are reversible, so silicon p-n junctions
can be used as ammonia vapors sensors.
Опис
Фотоэлектроника = Photoelectronics / ОНУ имени И. И. Мечникова. - Одесса : Астропринт,2007.
Ключові слова
Бібліографічний опис
Фотоэлектроника = Photoelectronics