Please use this identifier to cite or link to this item: http://dspace.onu.edu.ua:8080/handle/123456789/5771
Title: Modelling of rapid stage decay of signal of optical sensor based on heterostructure CdS-Cu2S
Other Titles: Одесский национальный университет имени И. И. Мечникова
Authors: Borshchak, Vitalii A.
Smyntyna, Valentyn A.
Brytavskyi, Yevhen V.
Борщак, Виталий Анатольевич
Борщак, Віталій Анатолійович
Citation: Фотоэлектроника = Photoelectronics
Issue Date: 2014
Publisher: Одесский национальный университет имени И. И. Мечникова
Keywords: nonideal heterojunction
image sensor
deep traps
tunneling
Series/Report no.: ;№ 23, р. 152-155.
Abstract: The work is devoted to modeling and calculation of the spatial distribution of the concentration of charge localized in the space charge region (SCR) heterojunction, this distribution changes with time at different initial filling of deep traps centers nonequilibrium holes. Within the framework described model the theoretical calculation of two characteristic stages of relaxation current, compliance with the calculated and experimentally obtained dependencies was demonstrated.
Description: Фотоэлектроника = Photoelectronics / ОНУ имени И. И. Мечникова. - Одесса, 2014. - англ
URI: http://dspace.onu.edu.ua:8080/handle/123456789/5771
Appears in Collections:Photoelectronics

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