Please use this identifier to cite or link to this item: http://dspace.onu.edu.ua:8080/handle/123456789/2602
Title: INVESTIGATION IN TEMPERATURE AND FREQUENCY DEPENDENCES FOR CONDUCTIVITY IN BARRIER REGION OF NONIDEAL HETEROJUNCTION
Authors: Smyntyna, Valentyn A.
Borshchak, Vitalii A.
Kutalova, Mariia I.
Zatovska, Nataliia P.
Balaban, Andrii P.
Борщак, Віталій Анатолійович
Борщак, Виталий Анатольевич
Куталова, Мария Ивановна
Куталова, Марія Іванівна
Citation: Фотоэлектроника = Photoelectronics
Issue Date: 2005
Publisher: Астрапринт
Series/Report no.: ;№14,р.5-7
Abstract: The described experimental data indicate the tunnel-jumping character of carriers transport through space-charge region (SCR) of heterojunction CdS—Cu2S.The conductivity caused by this mechanism essentially depends on the barrier parameters which can vary under illumination.This conductivity has the determinative influence on photo-electric properties of CdS—Cu2S heterophotoelements. Rather low efficiency values of these elements, small Uос values and,in many cases,the rectification factor of volt-current char¬acteristics (VCC) are caused by junction external shunting as in the case the element conductivity would not find out the listed above features.In spite of similar VCC,the elements with various shunting mechanisms their character (tunnel-jumping transport on the located levels through a barrier or external with respect to junction transport) can be easy determined experimentally.
Description: Фотоэлектроника = Photoelectronics / ОНУ имени И. И. Мечникова. - Одесса : Астропринт,2005. - англ.
URI: http://dspace.onu.edu.ua:8080/handle/123456789/2602
Appears in Collections:Photoelectronics

Files in This Item:
File Description SizeFormat 
5-7+.PDF2.37 MBAdobe PDFThumbnail
View/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.