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dc.contributor.authorMalushyn, M. V.-
dc.contributor.authorSkobieieva, V. M.-
dc.contributor.authorSmyntyna, Valentyn A.-
dc.date.accessioned2012-10-12T10:42:35Z-
dc.date.available2012-10-12T10:42:35Z-
dc.date.issued2003-
dc.identifier.citationФiзика напiвпровiдникiв, квантова та оптоелектронiка = Semiconductor Physics, Quantum Elecnronics and Optoelectronicsuk
dc.identifier.urihttp://dspace.onu.edu.ua:8080/handle/123456789/2601-
dc.descriptionФiзика напiвпровiдникiв, квантова та оптоелектронiка = Semiconductor Physics, Quantum Elecnronics and Optoelectronics : International Scientific Journal / , Iн-т фiзики напiвпровiдникiв . – 1998 . – На англ. яз.uk
dc.description.abstractTemperature dependence of luminescence intensity inherent to zinc telluride films prepared by the method of vacuum deposition and containing an oxygen impurity was investigated.The model explaining non-monotonous behaviour of curve temperature dependence for the "oxygen" band (A^=650 nm) is offered.According to this model, during quenching luminescence,the centers of a luminescence and those of the majority carriers capture participate.Determined are the values of the activation energy and concentration of the appropriate centers at which abnormal dependence of luminescence intensity on the temperature is observed.uk
dc.language.isoenuk
dc.relation.ispartofseries;V.6 N.2 P.214-216-
dc.subjectluminescenceuk
dc.subjectquenchinguk
dc.subjectcentre of luminescenceuk
dc.subjectcentre of captureuk
dc.subjecttemperature dependenceuk
dc.titleTemperature dependence of luminescence pecularities in oxygen doped ZnTe filmsuk
dc.typeArticleuk
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