Temperature dependence of luminescence pecularities in oxygen doped ZnTe films
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Дата
2003
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Анотація
Temperature dependence of luminescence intensity inherent to zinc telluride films prepared by the method of vacuum deposition and containing an oxygen impurity was investigated.The model explaining non-monotonous behaviour of curve temperature dependence for the "oxygen" band (A^=650 nm) is offered.According to this model, during quenching luminescence,the centers of a luminescence and those of the majority carriers capture participate.Determined are the values of the activation energy and concentration of the appropriate centers at which abnormal dependence of luminescence intensity on the temperature is observed.
Опис
Фiзика напiвпровiдникiв, квантова та оптоелектронiка = Semiconductor Physics, Quantum Elecnronics and Optoelectronics : International Scientific Journal / , Iн-т фiзики напiвпровiдникiв . – 1998 . – На англ. яз.
Ключові слова
luminescence, quenching, centre of luminescence, centre of capture, temperature dependence
Бібліографічний опис
Фiзика напiвпровiдникiв, квантова та оптоелектронiка = Semiconductor Physics, Quantum Elecnronics and Optoelectronics