Please use this identifier to cite or link to this item: http://dspace.onu.edu.ua:8080/handle/123456789/2601
Title: Temperature dependence of luminescence pecularities in oxygen doped ZnTe films
Authors: Malushyn, M. V.
Skobieieva, V. M.
Smyntyna, Valentyn A.
Citation: Фiзика напiвпровiдникiв, квантова та оптоелектронiка = Semiconductor Physics, Quantum Elecnronics and Optoelectronics
Issue Date: 2003
Keywords: luminescence
quenching
centre of luminescence
centre of capture
temperature dependence
Series/Report no.: ;V.6 N.2 P.214-216
Abstract: Temperature dependence of luminescence intensity inherent to zinc telluride films prepared by the method of vacuum deposition and containing an oxygen impurity was investigated.The model explaining non-monotonous behaviour of curve temperature dependence for the "oxygen" band (A^=650 nm) is offered.According to this model, during quenching luminescence,the centers of a luminescence and those of the majority carriers capture participate.Determined are the values of the activation energy and concentration of the appropriate centers at which abnormal dependence of luminescence intensity on the temperature is observed.
Description: Фiзика напiвпровiдникiв, квантова та оптоелектронiка = Semiconductor Physics, Quantum Elecnronics and Optoelectronics : International Scientific Journal / , Iн-т фiзики напiвпровiдникiв . – 1998 . – На англ. яз.
URI: http://dspace.onu.edu.ua:8080/handle/123456789/2601
Appears in Collections:Статті та доповіді ФМФІТ

Files in This Item:
File Description SizeFormat 
214-216 Smyntyna+.pdf152.19 kBAdobe PDFThumbnail
View/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.