Please use this identifier to cite or link to this item: http://dspace.onu.edu.ua:8080/handle/123456789/2558
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dc.contributor.authorBorshchak, Vitalii A.-
dc.contributor.authorZatovska, Nataliia P.-
dc.contributor.authorKutalova, Mariia I.-
dc.contributor.authorSmyntyna, Valentyn A.-
dc.contributor.authorБорщак, Віталій Анатолійович-
dc.contributor.authorБорщак, Виталий Анатольевич-
dc.contributor.authorКуталова, Мария Ивановна-
dc.contributor.authorКуталова, Марія Іванівна-
dc.date.accessioned2012-07-30T10:08:34Z-
dc.date.available2012-07-30T10:08:34Z-
dc.date.issued2001-
dc.identifier.citationФотоэлектроника = Photoelectronicsuk
dc.identifier.urihttp://dspace.onu.edu.ua:8080/handle/123456789/2558-
dc.descriptionФотоэлектроника = Photoelectronics / ОНУ имени И. И. Мечникова. - Одесса : Астропринт,2001. - англuk
dc.description.abstractIn this work the effect of photoexcitation on the parameters of surface potential barrier is investigated. We have examined in detail the phenomenon, which is deter¬mined by trapping of nonequilibrium carriers into the deep levels. It is shown how the parameters of surface barrier are governed by visible excitation. The described effect together with the usage of an asymmetric heterojunction permits the fabrication of an image sensor of a quite new type.uk
dc.language.isoenuk
dc.publisherAstroprintuk
dc.relation.ispartofseries;Вип. 10, С.25-28-
dc.titleINFLUENCE OF PHOTOEXCITATION ON THE PARAMETERS OF SURFACE POTENTIAL BARRIERuk
dc.typeArticleuk
Appears in Collections:Photoelectronics

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