INFLUENCE OF PHOTOEXCITATION ON THE PARAMETERS OF SURFACE POTENTIAL BARRIER

Abstract

In this work the effect of photoexcitation on the parameters of surface potential barrier is investigated. We have examined in detail the phenomenon, which is deter¬mined by trapping of nonequilibrium carriers into the deep levels. It is shown how the parameters of surface barrier are governed by visible excitation. The described effect together with the usage of an asymmetric heterojunction permits the fabrication of an image sensor of a quite new type.