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http://dspace.onu.edu.ua:8080/handle/123456789/16604
Title: | Surface modification of gallium phosphide stimulated by high-power pulsed laser irradiation |
Authors: | Yevtushenko, Nina H. Stukalov, Serhii A. Rotner, S. M. |
Citation: | Фотоэлектроника = Photoelectronics |
Issue Date: | 2004 |
Publisher: | Одеський національний університет імені І. І. Мечникова |
Keywords: | monocrystal Czochralski method laser spectrum |
Series/Report no.: | ;Вип. 13. |
Abstract: | The growth condition effect of gallium phosphide monocrystals grown by Czochralski method on change of microhardness, photoluminescence and edge absorption spectrum under the action of high power pulsed laser radiation has been studied. The modifications of microhardness and edge absorption curves, increases in a number of radiative recombination centers has been associated with laser stimulated dissociation of the region rich of impurities, generation of defects and their interaction with intrinsic defects. |
URI: | http://dspace.onu.edu.ua:8080/handle/123456789/16604 |
Other Identifiers: | UDC 621.315.592 |
Appears in Collections: | Photoelectronics |
Files in This Item:
File | Description | Size | Format | |
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с.22-24.pdf | 2.46 MB | Adobe PDF | View/Open |
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