Physical problems of the reliability of sensors based on A2B6 semiconductor compounds
Hrinevych, Viktor S.
Smyntyna, Valentyn A.
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The sensors were made using the technology for vacuum deposition of the original material on an insulating substrate. In this case, a film of thickness 1 pin was formed which was equipped with planar indium ohmic contacts. The electrode gap was 2 mm. At the operating temperature, such sensors function mainly under conditions of changing current and resistance when exposed to a variation in gas concentration.
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