Physical problems of the reliability of sensors based on A2B6 semiconductor compounds
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Дата
1989
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Анотація
The sensors were made using the technology for vacuum deposition of the original material
on an insulating substrate. In this case, a film of thickness 1 pin was formed which was
equipped with planar indium ohmic contacts. The electrode gap was 2 mm. At the operating
temperature, such sensors function mainly under conditions of changing current and resistance
when exposed to a variation in gas concentration.
Опис
Ключові слова
physical problems, reliability, sensors, semiconductor compounds
Бібліографічний опис
Тезисы докладов Всесоюзной конференции "Химические сенсоры - 89". Ленинград, 1989 г. Т.2.- С.188.